© Copyright 2001-2004

ITherm

ITherm 2004
Conference Program
Keynote Speakers


"Sensor Technology: Growth and Challenges"
Mr. Gerald Trant
Global Technology Leader
Micro and Nano Structures Technology (M&NST)
General Electric Corporate Research and Development
Schenectady, NY, USA
http://www.crd.ge.com/ourpeople

Abstract
GE Global Research Center is the heart of advanced research for all of the GE businesses. One large and growing research area for the Center is sensor technology development with the goal of providing new, game-changing, technology for the GE Infrastructure sensor business. Sensors are becoming a key enabling technology for a broad range of industrial, commercial, medical, military and homeland defense applications. Sensors for example, are used to monitor the performance of a system, the operating conditions of a system, and the environmental conditions surrounding a system. The sensor data is used to control the operation of a system, adjusting its performance as environmental conditions or machine maintenance conditions change. Sensor data can be pressure, temperature, moisture, presence of a particular chemical or compound in a gas or liquid, shock, vibration, speed, location or dozens of other parameters. Because these sensors are exposed to the environment that they are monitoring, they often must be able to withstand harsh environments such as temperature extremes, caustic fluids, high shock and vibration. This places unique requirements on the sensor packaging and assembly materials and structures used. This talk will present an overview of the growth of the sensor application space and trends across multiple industries such as power generation, medical, and applications such as homeland security. The speaker will also highlight the challenges faced by engineers and scientists as they develop sensor technology for this new age of smart sensor systems.

Biography
A native of Westfield, Mass., Mr. Gerald Trant earned his B.S. degree in electrical engineering from Western New England College and his M.S. degree in the same discipline from Syracuse University. He is a graduate of GE?s Advanced Course in Engineering and the Edison Engineering Program. Mr. Trant joined GE in 1978 and held various leadership positions including electronics and software manager, signal electronics manager, and GE Aerospace/Lockheed Martin manager for circuit assemblies and ASICs. Mr. Trant previously had been NPI Manager at Industrial Systems where he led the development of the Industrial Drives and Controls next-generation products and major VCPs, and also led a team of 135 engineers based in the U.S. and India. In January 2002 he assumed the position of Global Technology Manager, Micro and Nano Structures Technologies at the GE Global Research Center in Niskayuna, New York. This group is currently comprised of nine laboratories, two of which are in Bangalore Munich and employ about180 personnel. Mr. Trant and his wife, Sharon, have three daughters, Carrie, Chelsea, and Shannon, and a son, Patrick.

"Thermal Phenomena in Nanoscale Transistors"
Prof. Kenneth E. Goodson
Department Mechanical Engineering
Stanford University, Stanford, CA 94305
[email protected]
http://me.stanford.edu/faculty/facultydir/goodson.html
http://www.stanford.edu/group/microheat/
Co-author: Eric Pop, Department of 1Electrical Engineering, Stanford University

Abstract
Heat transfer within the microprocessor chip influences circuit performance and reliability, and on-chip thermal engineering will grow more important with future nodes on the technology roadmap. Near-term problems include nanometer-scale hotspots within individual transistors, millimeter-scale hotspots distributed on the microprocessor surface, and increasing temperatures in multilevel interconnects. Long-term challenges include the large thermal resistances of exotic nanotransistors (ultra-thin SOI, strained silicon, FINFET/PillarFET) and 3D multilayer circuit architectures. This talk will summarize on-chip thermal challenges and research ranging from electron-phonon based nanotransistor simulations to microchannel cooling of 3D circuits with solid-state electroosmotic pumping.

Biography
Prof. Kenneth E. Goodson is an Associate Professor with the Mechanical Engineering Department at Stanford University. After receiving the Ph.D. in Mechanical Engineering from MIT in 1993, Prof. Goodson worked with the Materials Research Group at Daimler-Benz AG on the thermal design of power circuits. In 1994 he joined Stanford, where his research group now includes twenty students and research associates. He has authored more than 120 journal and conference papers and five book chapters and has been recognized through the ONR Young Investigator Award and the NSF CAREER Award as well as Best Paper Awards at SEMI-THERM (2001), the Multilevel Interconnect Symposium (1998), and SRC TECHCON (1998). Goodson was a 1999 Outstanding Reviewer for the ASME Journal of Heat Transfer and a 1996 JSPS Visiting Professor at the Tokyo Institute of Technology. Goodson is a founder and former Chief Technology Officer of Cooligy, a silicon valley startup with 35 employees working on electroosmotic microchannel cooling systems for integrated circuits.

"Nanoscale Heat Transfer and Nanostructured Thermoelectrics"
Prof. Gang Chen
Associate Professor
Department of Mechanical Engineering
Massachusetts Institute of Technology
77 Massachusetts Avenue, Room 3-158
Cambridge, MA 02139-4307 USA
[email protected]
http://www-me.mit.edu/people/personal/gchen2.htm

Abstract
Heat transfer at nanoscales differs significantly from that in macroscales because of size effects on the phonon and electron transport. Nanoscale heat transfer effects have significant implications for the microelectronic industry, from the thermal management, the device design and reliability, and the active cooling considerations. Past studies have shown that heat conduction in nanostructures can be significantly impeded below that of the predictions of the Fourier theory. Such side effects imply higher device temperatures than anticipated and demand more stringent thermal management measures. On the other hand, similar size effects can be exploited for developing highly efficient thermoelectric materials for direct cooling. In addition, the electron energy conversion efficiency can be improved with nanostructures through quantum size effects. This paper first discusses some of the nanoscale heat transfer effects and elaborates on the impacts of nanoscale heat transfer on the device performance, and then discuss the potential of developing highly efficient thermoelectric cooling devices based on nanostructured materials. The state-of-the-art in thermoelectric materials development will be summarized.

Biography
Dr. Gang Chen received his Ph.D. from University of California at Berkeley in 1993. He taught at Duke University (1993-1997), UCLA (1997-2001) and is currently an Associate Professor at MIT. His research interests are in the area of nanoscale transport phenomena, particularly thermal energy transport, and their applications in energy and information technologies. He has published extensively in the area of micro and nanoscale heat transfer and energy conversion. He is a recipient of the NSF Young Investigator Award and a Guggenheim Fellowship, and serves on the editorial board for four journals.

"Packaging of Image Sensor Devices for Camera Module Applications"
Dr. Robert Darveaux
Senior Vice President
Amkor Technology, Inc., 1900 S. Price Road
Chandler, AZ 85236, USA.
[email protected]

Abstract
Production of image sensor devices has increased dramatically in recent years due to wide scale adoption of camera modules in mobile phones. It is expected that over 150M camera modules will be shipped in mobile phones in 2004. The packaging of an image sensor in a camera module presents several unique engineering challenges. Materials selection, facilities control, assembly process, and image test are all areas where technology is rapidly developing. This paper will focus on current challenges, and highlight several areas where advances in research and development are needed.

Biography
Dr. Robert Darveaux is currently Senior Vice President of New Products Business Unit with Amkor Technology, Inc. In this capacity he is responsible for flip chip, camera module, and DLP product lines. Dr. Darveaux received a B.S. degree in Nuclear Engineering from Iowa State University, a Ph. D. in Materials Science and Engineering from North Carolina State University. He has 17 years of experience in the IC packaging field with MCNC, Motorola, Inc. and Amkor, Inc. His areas of interest include materials characterization, failure analysis, reliability testing, thermal analysis, structural analysis, and fatigue life prediction. Dr. Darveaux holds 17 patents and has 44 publications to his credit.